IPP60R520E6

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IPP60R520E6 datasheet

• Маркировка
  IPP60R520E6
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPP60R520E6 Continuous Drain Current: 8.1 A Current - Continuous Drain (id) @ 25?° C: 8.1A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 650 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 23.4nC @ 10V Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 512pF @ 100V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: * Package / Case: * Power - Max: 66W Power Dissipation: 66 W Rds On (max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V Resistance Drain-source Rds (on): 0.47 Ohms Series: CoolMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 3.5V @ 230?µA RoHS: yes Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 0.47 Ohms Part # Aliases: IPP60R520E6XK IPP60R520E6XKSA1 SP000797294
• Количество страниц
  16 шт.
• Форматы файла
  HTML, PDF

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